onsemi-Single FETs, MOSFETs-FDZ661PZ

Description

Drain to Source Voltage;20V/Gate Charge(Qg);8.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.3W/RDS(on);140mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;555pF


P-Channel 20V 2.6A 1.3W Surface Mount WLCSP-4(0.8X0.8)

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);8.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.3W/RDS(on);140mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);8.8nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.3W/RDS(on);140mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);2.6A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;555pF


    P-Channel 20V 2.6A 1.3W Surface Mount WLCSP-4(0.8X0.8)

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