onsemi-Single FETs, MOSFETs-FDZ663P

Description

Drain to Source Voltage;20V/Gate Charge(Qg);8.2nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);288mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;525pF/Output Capacitance(Coss);85pF


20V 288mΩ@1.5V 1 P-Channel 1.3W WLCSP-4(0.8x0.8) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);8.2nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);288mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);8.2nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.3W/RDS(on);288mΩ@1.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;525pF/Output Capacitance(Coss);85pF


    20V 288mΩ@1.5V 1 P-Channel 1.3W WLCSP-4(0.8x0.8) Single FETs, MOSFETs RoHS

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