onsemi-Single FETs, MOSFETs-FQA9N50

Description

Drain to Source Voltage;500V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);730mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);9.6A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.45nF/Output Capacitance(Coss);210pF


500V 730mΩ@10V 1 N-channel 160W TO-3P Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;500V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);730mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);9.6A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;500V/Gate Charge(Qg);36nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;160W/RDS(on);730mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);9.6A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;1.45nF/Output Capacitance(Coss);210pF


    500V 730mΩ@10V 1 N-channel 160W TO-3P Single FETs, MOSFETs RoHS

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