onsemi-Single FETs, MOSFETs-FQD4N25TM-WS

Description

Drain to Source Voltage;250V/Gate Charge(Qg);5.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.5W;37W/RDS(on);1.75Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;200pF


250V 1.75Ω@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;250V/Gate Charge(Qg);5.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.5W;37W/RDS(on);1.75Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;200pF250V 1.75Ω@10V 1... Read more

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    Description

    Drain to Source Voltage;250V/Gate Charge(Qg);5.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.5W;37W/RDS(on);1.75Ω@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));5V/Ciss-Input Capacitance;200pF


    250V 1.75Ω@10V 1 N-channel TO-252AA Single FETs, MOSFETs RoHS

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