onsemi-Single FETs, MOSFETs-FQP19N20L

Description

Drain to Source Voltage;200V/Gate Charge(Qg);35nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;140W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2.2nF/Output Capacitance(Coss);290pF


200V 140mΩ@10V 1 N-channel 140W TO-220-3 Single FETs, MOSFETs RoHS

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Drain to Source Voltage;200V/Gate Charge(Qg);35nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;140W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);35nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;140W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);40pF/Current - Continuous Drain(Id);21A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;2.2nF/Output Capacitance(Coss);290pF


    200V 140mΩ@10V 1 N-channel 140W TO-220-3 Single FETs, MOSFETs RoHS

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