onsemi-Single FETs, MOSFETs-FQT13N06TF

Description

Drain to Source Voltage;60V/Gate Charge(Qg);7.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.1W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;310pF


60V 1 N-channel 2.1W SOT-223-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);7.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.1W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);7.5nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.1W/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);15pF/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;310pF


    60V 1 N-channel 2.1W SOT-223-4 Single FETs, MOSFETs RoHS

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