Drain to Source Voltage;45V/Gate Charge(Qg);40nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.4W/RDS(on);22mΩ@10V/Current - Continuous Drain(Id);8A/Ciss-Input Capacitance;2.225nF45V 22mΩ@10V 1 N-channel 2.4W SOIC-8-175mil Single FETs,... Read more

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