onsemi-Single FETs, MOSFETs-FW297-TL-2W

Description

Drain to Source Voltage;60V/Gate Charge(Qg);14nC@10V/Number;2 N-Channel/Pd - Power Dissipation;1.8W/RDS(on);58mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;750pF


60V 58mΩ@10V 2 N-Channel 1.8W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);14nC@10V/Number;2 N-Channel/Pd - Power Dissipation;1.8W/RDS(on);58mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;750pF60V 58mΩ@10V 2... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);14nC@10V/Number;2 N-Channel/Pd - Power Dissipation;1.8W/RDS(on);58mΩ@10V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;750pF


    60V 58mΩ@10V 2 N-Channel 1.8W SOIC-8 Single FETs, MOSFETs RoHS

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