onsemi-Single FETs, MOSFETs-HUF76145S3

Description

Drain to Source Voltage;30V/Gate Charge(Qg);156nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;270W/RDS(on);4.5mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;4.9nF


30V 4.5mΩ@10V 1 N-channel 270W I2PAK(TO-262) Single FETs, MOSFETs

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);156nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;270W/RDS(on);4.5mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;4.9nF30V 4.5mΩ@10V 1... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);156nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;270W/RDS(on);4.5mΩ@10V/Operating Temperature -;-40℃~+150℃/Current - Continuous Drain(Id);75A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;4.9nF


    30V 4.5mΩ@10V 1 N-channel 270W I2PAK(TO-262) Single FETs, MOSFETs

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