onsemi-Single FETs, MOSFETs-HUFA76404DK8T

Description

Drain to Source Voltage;62V/Gate Charge(Qg);4.9nC@5V/Number;2 N-Channel/Pd - Power Dissipation;2.5W/RDS(on);132mΩ@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;250pF/Output Capacitance(Coss);80pF


62V 132mΩ@5V 2 N-Channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;62V/Gate Charge(Qg);4.9nC@5V/Number;2 N-Channel/Pd - Power Dissipation;2.5W/RDS(on);132mΩ@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;62V/Gate Charge(Qg);4.9nC@5V/Number;2 N-Channel/Pd - Power Dissipation;2.5W/RDS(on);132mΩ@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);7pF/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;250pF/Output Capacitance(Coss);80pF


    62V 132mΩ@5V 2 N-Channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

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