onsemi-Single FETs, MOSFETs-IRF9510R4941

Description

Drain to Source Voltage;100V/Gate Charge(Qg);11nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;20W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;180pF/Output Capacitance(Coss);85pF


100V 1.2Ω@10V 1 P-Channel 20W TO-220AB Single FETs, MOSFETs RoHS

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Drain to Source Voltage;100V/Gate Charge(Qg);11nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;20W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);11nC/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;20W/RDS(on);1.2Ω@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;180pF/Output Capacitance(Coss);85pF


    100V 1.2Ω@10V 1 P-Channel 20W TO-220AB Single FETs, MOSFETs RoHS

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