onsemi-Single FETs, MOSFETs-IRFM120A

Description

Drain to Source Voltage;100V/Gate Charge(Qg);22nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.4W/RDS(on);200mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;480pF/Output Capacitance(Coss);110pF


100V 200mΩ@10V 1 N-channel 2.4W SOT-223-4 Single FETs, MOSFETs

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);22nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.4W/RDS(on);200mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);22nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;2.4W/RDS(on);200mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);2.3A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;480pF/Output Capacitance(Coss);110pF


    100V 200mΩ@10V 1 N-channel 2.4W SOT-223-4 Single FETs, MOSFETs

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