onsemi-Single FETs, MOSFETs-IRFS254BFP001

Description

Drain to Source Voltage;250V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;4.8W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.4nF/Output Capacitance(Coss);380pF


250V 140mΩ@10V 1 N-channel 4.8W TO-220F Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;250V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;4.8W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;250V/Gate Charge(Qg);123nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;4.8W/RDS(on);140mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);80pF/Current - Continuous Drain(Id);16A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;3.4nF/Output Capacitance(Coss);380pF


    250V 140mΩ@10V 1 N-channel 4.8W TO-220F Single FETs, MOSFETs RoHS

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