onsemi-Single FETs, MOSFETs-IRL8113PBF

Description

Drain to Source Voltage;30V/Gate Charge(Qg);23nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);290pF/Current - Continuous Drain(Id);105A/Gate Threshold Voltage (Vgs(th));2.25V/Ciss-Input Capacitance;2.84nF/Output Capacitance(Coss);620pF


30V 6mΩ@10V 1 N-channel 110W TO-220AB Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);23nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);290pF/Current - Continuous Drain(Id);105A/Gate Threshold Voltage (Vgs(th));2.25V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);23nC@4.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;110W/RDS(on);6mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);290pF/Current - Continuous Drain(Id);105A/Gate Threshold Voltage (Vgs(th));2.25V/Ciss-Input Capacitance;2.84nF/Output Capacitance(Coss);620pF


    30V 6mΩ@10V 1 N-channel 110W TO-220AB Single FETs, MOSFETs RoHS

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