onsemi-Single FETs, MOSFETs-IRLM110ATF

Description

Drain to Source Voltage;100V/Gate Charge(Qg);5.5nC@5V/Number;1 N-channel/Pd - Power Dissipation;2.2W/RDS(on);440mΩ@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;235pF


100V 440mΩ@5V 1 N-channel 2.2W SOT-223-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);5.5nC@5V/Number;1 N-channel/Pd - Power Dissipation;2.2W/RDS(on);440mΩ@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);5.5nC@5V/Number;1 N-channel/Pd - Power Dissipation;2.2W/RDS(on);440mΩ@5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);25pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));2V/Ciss-Input Capacitance;235pF


    100V 440mΩ@5V 1 N-channel 2.2W SOT-223-4 Single FETs, MOSFETs RoHS

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