onsemi-Single FETs, MOSFETs-IRLM220ATF

Description

Drain to Source Voltage;200V/Gate Charge(Qg);10.3nC@5V/Number;1 N-channel/Pd - Power Dissipation;2W/RDS(on);800mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;330pF


200V 800mΩ 1 N-channel 2W SOT-223-4 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;200V/Gate Charge(Qg);10.3nC@5V/Number;1 N-channel/Pd - Power Dissipation;2W/RDS(on);800mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;330pF200V 800mΩ 1... Read more

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    Description

    Drain to Source Voltage;200V/Gate Charge(Qg);10.3nC@5V/Number;1 N-channel/Pd - Power Dissipation;2W/RDS(on);800mΩ/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8pF/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;330pF


    200V 800mΩ 1 N-channel 2W SOT-223-4 Single FETs, MOSFETs RoHS

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