onsemi-Single FETs, MOSFETs-MCH3376-TL-E

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.7nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;800mW/RDS(on);241mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;120pF


20V 241mΩ@4.5V 1 P-Channel 800mW MCPH-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.7nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;800mW/RDS(on);241mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.7nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;800mW/RDS(on);241mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);1.5A/Gate Threshold Voltage (Vgs(th));1.4V/Ciss-Input Capacitance;120pF


    20V 241mΩ@4.5V 1 P-Channel 800mW MCPH-3 Single FETs, MOSFETs RoHS

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