onsemi-Single FETs, MOSFETs-MCH3477-TL-H

Description

Drain to Source Voltage;20V/Gate Charge(Qg);5.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);29mΩ@1.5V/Reverse Transfer Capacitance (Crss@Vds);59pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;410pF


20V 29mΩ@1.5V 1 N-channel 1W SOT-323-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);5.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);29mΩ@1.5V/Reverse Transfer Capacitance (Crss@Vds);59pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;410pF20V 29mΩ@1.5V... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);5.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1W/RDS(on);29mΩ@1.5V/Reverse Transfer Capacitance (Crss@Vds);59pF/Current - Continuous Drain(Id);4.5A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;410pF


    20V 29mΩ@1.5V 1 N-channel 1W SOT-323-3 Single FETs, MOSFETs RoHS

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