onsemi-Single FETs, MOSFETs-MCH6344-TL-H

Description

Drain to Source Voltage;30V/Gate Charge(Qg);3.9nC@10V/Number;1 P-Channel/Pd - Power Dissipation;800mW/RDS(on);115mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;172pF


30V 115mΩ@10V 1 P-Channel 800mW SC-88FL Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);3.9nC@10V/Number;1 P-Channel/Pd - Power Dissipation;800mW/RDS(on);115mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;172pF30V 115mΩ@10V... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);3.9nC@10V/Number;1 P-Channel/Pd - Power Dissipation;800mW/RDS(on);115mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);36pF/Current - Continuous Drain(Id);2A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;172pF


    30V 115mΩ@10V 1 P-Channel 800mW SC-88FL Single FETs, MOSFETs RoHS

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