onsemi-Single FETs, MOSFETs-MCH6353-TL-W

Description

Drain to Source Voltage;12V/Gate Charge(Qg);12nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.4W/RDS(on);29mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);6A/Ciss-Input Capacitance;1.25nF


12V 29mΩ@4.5V 1 P-Channel 1.4W SOT-363-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);12nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.4W/RDS(on);29mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);6A/Ciss-Input Capacitance;1.25nF12V 29mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);12nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;1.4W/RDS(on);29mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);150pF/Current - Continuous Drain(Id);6A/Ciss-Input Capacitance;1.25nF


    12V 29mΩ@4.5V 1 P-Channel 1.4W SOT-363-6 Single FETs, MOSFETs RoHS

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