onsemi-Single FETs, MOSFETs-MCH6431-TL-W

Description

Drain to Source Voltage;30V/Gate Charge(Qg);5.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);42mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;280pF


30V 42mΩ@10V 1 N-channel 1.5W SOT-363-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);5.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);42mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;280pF30V 42mΩ@10V... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);5.6nC@10V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);42mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);30pF/Current - Continuous Drain(Id);5A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;280pF


    30V 42mΩ@10V 1 N-channel 1.5W SOT-363-6 Single FETs, MOSFETs RoHS

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