onsemi-Single FETs, MOSFETs-MCH6436-TL-W

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);26mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;710pF


30V 26mΩ@4.5V 1 N-channel 1.5W SOT-363-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);7.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);26mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;710pF30V 26mΩ@4.5V... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7.5nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;1.5W/RDS(on);26mΩ@4.5V/Reverse Transfer Capacitance (Crss@Vds);65pF/Current - Continuous Drain(Id);6A/Gate Threshold Voltage (Vgs(th));1.3V/Ciss-Input Capacitance;710pF


    30V 26mΩ@4.5V 1 N-channel 1.5W SOT-363-6 Single FETs, MOSFETs RoHS

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