onsemi-Single FETs, MOSFETs-MCH6661-TL-W

Description

Drain to Source Voltage;30V/Gate Charge(Qg);2nC@10V/Number;1 N-channel/Pd - Power Dissipation;800mW/RDS(on);145mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);1.8A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;88pF


30V 145mΩ@10V 1 N-channel 800mW SOT-363-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);2nC@10V/Number;1 N-channel/Pd - Power Dissipation;800mW/RDS(on);145mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);1.8A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;88pF30V 145mΩ@10V... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);2nC@10V/Number;1 N-channel/Pd - Power Dissipation;800mW/RDS(on);145mΩ@10V/Reverse Transfer Capacitance (Crss@Vds);11pF/Current - Continuous Drain(Id);1.8A/Gate Threshold Voltage (Vgs(th));2.6V/Ciss-Input Capacitance;88pF


    30V 145mΩ@10V 1 N-channel 800mW SOT-363-6 Single FETs, MOSFETs RoHS

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