onsemi-Single FETs, MOSFETs-MGSF3442XT1

Description

Drain to Source Voltage;20V/Type;N-Channel/Pd - Power Dissipation;400mW/RDS(on);95mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);1.7A/Gate Threshold Voltage (Vgs(th));600mV/Output Capacitance(Coss);50pF


20V 95mΩ@2.5V 400mW Single FETs, MOSFETs

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Drain to Source Voltage;20V/Type;N-Channel/Pd - Power Dissipation;400mW/RDS(on);95mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);1.7A/Gate Threshold Voltage (Vgs(th));600mV/Output Capacitance(Coss);50pF20V 95mΩ@2.5V... Read more

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    Description

    Drain to Source Voltage;20V/Type;N-Channel/Pd - Power Dissipation;400mW/RDS(on);95mΩ@2.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);10pF/Current - Continuous Drain(Id);1.7A/Gate Threshold Voltage (Vgs(th));600mV/Output Capacitance(Coss);50pF


    20V 95mΩ@2.5V 400mW Single FETs, MOSFETs

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