Drain to Source Voltage;30V/Type;N-Channel/Pd - Power Dissipation;350mW/RDS(on);30Ω@0V/Operating Temperature -;-65℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);3.5pF/Current - Continuous Drain(Id);130mA/Ciss-Input Capacitance;10pF30V 30Ω@0V 350mW Single FETs,... Read more

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