onsemi-Single FETs, MOSFETs-MVMBF0201NLT1G

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;225mW/RDS(on);750mΩ;1Ω/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;45pF/Output Capacitance(Coss);25pF


N-Channel 20V 300mA 225mW Surface Mount SOT-23

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;225mW/RDS(on);750mΩ;1Ω/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.4nC/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;225mW/RDS(on);750mΩ;1Ω/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5pF/Current - Continuous Drain(Id);300mA/Gate Threshold Voltage (Vgs(th));2.4V/Ciss-Input Capacitance;45pF/Output Capacitance(Coss);25pF


    N-Channel 20V 300mA 225mW Surface Mount SOT-23

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