onsemi-Single FETs, MOSFETs-NDC632P

Description

Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);280mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;550pF/Output Capacitance(Coss);260pF


20V 280mΩ@4.5V 1 P-Channel 1.6W SuperSOT-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);280mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

$0.57 Excl. VAT

    • Guaranteed secure & safe checkout.

      shop pay

    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);15nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;1.6W/RDS(on);280mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);75pF/Current - Continuous Drain(Id);2.7A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;550pF/Output Capacitance(Coss);260pF


    20V 280mΩ@4.5V 1 P-Channel 1.6W SuperSOT-6 Single FETs, MOSFETs RoHS

    Recently viewed products

      Login

      Forgot your password?

      Don't have an account yet?
      Create account