onsemi-Single FETs, MOSFETs-NDP6060

Description

Drain to Source Voltage;60V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100W/RDS(on);25mΩ@10V/Operating Temperature -;-65℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);400pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.8nF/Output Capacitance(Coss);800pF


N-Channel 60V 48A 100W Through Hole TO-220

Product form

Drain to Source Voltage;60V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100W/RDS(on);25mΩ@10V/Operating Temperature -;-65℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);400pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;60V/Gate Charge(Qg);70nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;100W/RDS(on);25mΩ@10V/Operating Temperature -;-65℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);400pF/Current - Continuous Drain(Id);48A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;1.8nF/Output Capacitance(Coss);800pF


    N-Channel 60V 48A 100W Through Hole TO-220

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