onsemi-Single FETs, MOSFETs-NDS9435A

Description

Drain to Source Voltage;30V/Gate Charge(Qg);14nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;528pF/Output Capacitance(Coss);132pF


30V 80mΩ@4.5V 1 P-Channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);14nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);14nC@10V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;2.5W/RDS(on);80mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);5.3A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;528pF/Output Capacitance(Coss);132pF


    30V 80mΩ@4.5V 1 P-Channel 2.5W SOIC-8 Single FETs, MOSFETs RoHS

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