onsemi-Single FETs, MOSFETs-NDS9933A

Description

Drain to Source Voltage;20V/Gate Charge(Qg);8.5nC/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);140mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;405pF/Output Capacitance(Coss);170pF


20V 140mΩ@4.5V 2 P-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);8.5nC/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);140mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);8.5nC/Number;2 P-Channel/Type;P-Channel/Pd - Power Dissipation;2W/RDS(on);140mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);45pF/Current - Continuous Drain(Id);2.8A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;405pF/Output Capacitance(Coss);170pF


    20V 140mΩ@4.5V 2 P-Channel 2W SOIC-8 Single FETs, MOSFETs RoHS

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