onsemi-Single FETs, MOSFETs-NTA4151PT1G

Description

Drain to Source Voltage;20V/Gate Charge(Qg);2.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;301mW/RDS(on);360mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);760mA/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;156pF


P-Channel 20V 760mA 301mW Surface Mount SC-75(SOT-416)

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);2.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;301mW/RDS(on);360mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);760mA/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;156pFP-Channel 20V 760mA... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);2.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;301mW/RDS(on);360mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);760mA/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;156pF


    P-Channel 20V 760mA 301mW Surface Mount SC-75(SOT-416)

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