onsemi-Single FETs, MOSFETs-NTD4813NHT4G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);7.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;35.3W/RDS(on);18.5mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;940pF


30V 18.5mΩ@4.5V 1 N-channel 35.3W DPAK Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);7.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;35.3W/RDS(on);18.5mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);7.1nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;35.3W/RDS(on);18.5mΩ@4.5V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);115pF/Current - Continuous Drain(Id);40A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;940pF


    30V 18.5mΩ@4.5V 1 N-channel 35.3W DPAK Single FETs, MOSFETs RoHS

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