onsemi-Single FETs, MOSFETs-NTD6416ANT4G

Description

Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;71W/RDS(on);81mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;620pF


N-Channel 100V 17A 71W Surface Mount DPAK

Product form

Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;71W/RDS(on);81mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;100V/Gate Charge(Qg);20nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;71W/RDS(on);81mΩ@10V/Operating Temperature -;-55℃~+175℃/Reverse Transfer Capacitance (Crss@Vds);50pF/Current - Continuous Drain(Id);17A/Gate Threshold Voltage (Vgs(th));4V/Ciss-Input Capacitance;620pF


    N-Channel 100V 17A 71W Surface Mount DPAK

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