onsemi-Single FETs, MOSFETs-NTJS3151PT2G

Description

Drain to Source Voltage;12V/Gate Charge(Qg);8.6nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;625mW/RDS(on);60mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);3.3A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;850pF/Output Capacitance(Coss);170pF


12V 60mΩ@4.5V 1 P-Channel 625mW SC-88-6 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);8.6nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;625mW/RDS(on);60mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);3.3A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);8.6nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;625mW/RDS(on);60mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);110pF/Current - Continuous Drain(Id);3.3A/Gate Threshold Voltage (Vgs(th));1.2V/Ciss-Input Capacitance;850pF/Output Capacitance(Coss);170pF


    12V 60mΩ@4.5V 1 P-Channel 625mW SC-88-6 Single FETs, MOSFETs RoHS

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