onsemi-Single FETs, MOSFETs-NTLJS3113PT1G

Description

Drain to Source Voltage;20V/Gate Charge(Qg);15.7nC@4.5V/Number;1 P-Channel/RDS(on);40mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.5A/Ciss-Input Capacitance;1.329nF


20V 40mΩ@4.5V 1 P-Channel WDFN-6(2x2) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);15.7nC@4.5V/Number;1 P-Channel/RDS(on);40mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.5A/Ciss-Input Capacitance;1.329nF20V 40mΩ@4.5V 1 P-Channel WDFN-6(2x2) Single FETs, MOSFETs RoHS Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);15.7nC@4.5V/Number;1 P-Channel/RDS(on);40mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.5A/Ciss-Input Capacitance;1.329nF


    20V 40mΩ@4.5V 1 P-Channel WDFN-6(2x2) Single FETs, MOSFETs RoHS

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