onsemi-Single FETs, MOSFETs-NTLJS5D0N03CTAG

Description

Drain to Source Voltage;30V/Gate Charge(Qg);8nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.4W/RDS(on);4.38mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);18.8A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1.255nF


30V 4.38mΩ@10V 1 N-channel 2.4W WDFN-6(2x2) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);8nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.4W/RDS(on);4.38mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);18.8A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);8nC@10V/Number;1 N-channel/Pd - Power Dissipation;2.4W/RDS(on);4.38mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);20pF/Current - Continuous Drain(Id);18.8A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;1.255nF


    30V 4.38mΩ@10V 1 N-channel 2.4W WDFN-6(2x2) Single FETs, MOSFETs RoHS

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