onsemi-Single FETs, MOSFETs-NTLJS7D2P02P8ZTAG

Description

Drain to Source Voltage;20V/Gate Charge(Qg);26.7nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;860mW/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.9A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.79nF


P-Channel 20V 7.9A 860mW Surface Mount PQFN-6(2x2)

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);26.7nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;860mW/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.9A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.79nFP-Channel 20V 7.9A... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);26.7nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;860mW/RDS(on);9mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);7.9A/Gate Threshold Voltage (Vgs(th));1.5V/Ciss-Input Capacitance;2.79nF


    P-Channel 20V 7.9A 860mW Surface Mount PQFN-6(2x2)

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