onsemi-Single FETs, MOSFETs-NTMD4840NR2G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);9.5nC@10V/Number;2 N-Channel/Pd - Power Dissipation;1.95W/RDS(on);36mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);7.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;520pF


N-Channel Array 30V 7.5A 1.95W Surface Mount SOIC-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);9.5nC@10V/Number;2 N-Channel/Pd - Power Dissipation;1.95W/RDS(on);36mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);7.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);9.5nC@10V/Number;2 N-Channel/Pd - Power Dissipation;1.95W/RDS(on);36mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);70pF/Current - Continuous Drain(Id);7.5A/Gate Threshold Voltage (Vgs(th));3V/Ciss-Input Capacitance;520pF


    N-Channel Array 30V 7.5A 1.95W Surface Mount SOIC-8

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