onsemi-Single FETs, MOSFETs-NTMFS4841NHT1G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);25.4nC@11.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;41.7W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);177pF/Current - Continuous Drain(Id);57A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.436nF/Output Capacitance(Coss);348pF


N-Channel 30V Surface Mount SO-8

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);25.4nC@11.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;41.7W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);177pF/Current - Continuous Drain(Id);57A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);25.4nC@11.5V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;41.7W/RDS(on);7mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);177pF/Current - Continuous Drain(Id);57A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;1.436nF/Output Capacitance(Coss);348pF


    N-Channel 30V Surface Mount SO-8

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