onsemi-Single FETs, MOSFETs-NTMFS4939NT1G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);12.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);4.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26.5pF/Current - Continuous Drain(Id);53A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.954nF


30V 4.1mΩ@10V 1 N-channel 30W SO-8-FL-5.8mm Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);12.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);4.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26.5pF/Current - Continuous Drain(Id);53A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);12.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;30W/RDS(on);4.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);26.5pF/Current - Continuous Drain(Id);53A/Gate Threshold Voltage (Vgs(th));1.6V/Ciss-Input Capacitance;1.954nF


    30V 4.1mΩ@10V 1 N-channel 30W SO-8-FL-5.8mm Single FETs, MOSFETs RoHS

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