onsemi-Single FETs, MOSFETs-NTMFS4946NT1G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);21.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;55.5W/RDS(on);3.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);289pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;3.25nF


30V 3.8mΩ@4.5V 1 N-channel 55.5W SO-8-FL-5.8mm Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);21.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;55.5W/RDS(on);3.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);289pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);21.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;55.5W/RDS(on);3.8mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);289pF/Current - Continuous Drain(Id);100A/Gate Threshold Voltage (Vgs(th));1.8V/Ciss-Input Capacitance;3.25nF


    30V 3.8mΩ@4.5V 1 N-channel 55.5W SO-8-FL-5.8mm Single FETs, MOSFETs RoHS

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