onsemi-Single FETs, MOSFETs-NTMFS4983NFT3G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);47.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;38W/RDS(on);2.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);106A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;3.25nF


30V 2.1mΩ@10V 1 N-channel 38W SO-8-FL-5.8mm Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);47.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;38W/RDS(on);2.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);106A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);47.9nC@10V/Number;1 N-channel/Pd - Power Dissipation;38W/RDS(on);2.1mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);90pF/Current - Continuous Drain(Id);106A/Gate Threshold Voltage (Vgs(th));2.3V/Ciss-Input Capacitance;3.25nF


    30V 2.1mΩ@10V 1 N-channel 38W SO-8-FL-5.8mm Single FETs, MOSFETs RoHS

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