onsemi-Single FETs, MOSFETs-NTMFS4C810NAT3G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);18.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;23.6W/RDS(on);5.88mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);162pF/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;987pF/Output Capacitance(Coss);574pF


30V 5.88mΩ@10V 1 N-channel 23.6W DFN-5(5x6)(SO-8FL) Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);18.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;23.6W/RDS(on);5.88mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);162pF/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);18.6nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;23.6W/RDS(on);5.88mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);162pF/Current - Continuous Drain(Id);46A/Gate Threshold Voltage (Vgs(th));2.2V/Ciss-Input Capacitance;987pF/Output Capacitance(Coss);574pF


    30V 5.88mΩ@10V 1 N-channel 23.6W DFN-5(5x6)(SO-8FL) Single FETs, MOSFETs RoHS

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