onsemi-Single FETs, MOSFETs-NTMS4802NR2G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.66W/RDS(on);4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);460pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.3nF/Output Capacitance(Coss);880pF


30V 4mΩ@10V 1 N-channel 1.66W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.66W/RDS(on);4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);460pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);75nC@10V/Number;1 N-channel/Type;N-Channel/Pd - Power Dissipation;1.66W/RDS(on);4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);460pF/Current - Continuous Drain(Id);15A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;5.3nF/Output Capacitance(Coss);880pF


    30V 4mΩ@10V 1 N-channel 1.66W SOIC-8 Single FETs, MOSFETs RoHS

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