onsemi-Single FETs, MOSFETs-NTMS4939NR2G

Description

Drain to Source Voltage;30V/Gate Charge(Qg);12.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W/RDS(on);8.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);12.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2nF


30V 8.4mΩ@10V 1 N-channel 2W SOIC-8 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;30V/Gate Charge(Qg);12.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W/RDS(on);8.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);12.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;30V/Gate Charge(Qg);12.4nC@10V/Number;1 N-channel/Pd - Power Dissipation;2W/RDS(on);8.4mΩ@10V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);16pF/Current - Continuous Drain(Id);12.5A/Gate Threshold Voltage (Vgs(th));2.5V/Ciss-Input Capacitance;2nF


    30V 8.4mΩ@10V 1 N-channel 2W SOIC-8 Single FETs, MOSFETs RoHS

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