onsemi-Single FETs, MOSFETs-NTNS3A65PZT5G

Description

Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;155mW/RDS(on);1.3Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.5pF/Current - Continuous Drain(Id);281mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;44pF


20V 1.3Ω@4.5V 1 P-Channel 155mW SOT-883-3 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;155mW/RDS(on);1.3Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.5pF/Current - Continuous Drain(Id);281mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);1.1nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;155mW/RDS(on);1.3Ω@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);5.5pF/Current - Continuous Drain(Id);281mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;44pF


    20V 1.3Ω@4.5V 1 P-Channel 155mW SOT-883-3 Single FETs, MOSFETs RoHS

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