onsemi-Single FETs, MOSFETs-NTNS3C68NZT5G

Description

Drain to Source Voltage;12V/Gate Charge(Qg);1.8nC@4.5V/Type;N-Channel/Pd - Power Dissipation;156mW/RDS(on);440mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);758mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;67pF


12V 440mΩ@1.8V 156mW Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;12V/Gate Charge(Qg);1.8nC@4.5V/Type;N-Channel/Pd - Power Dissipation;156mW/RDS(on);440mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);758mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;67pF12V... Read more

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    Description

    Drain to Source Voltage;12V/Gate Charge(Qg);1.8nC@4.5V/Type;N-Channel/Pd - Power Dissipation;156mW/RDS(on);440mΩ@1.8V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);8.5pF/Current - Continuous Drain(Id);758mA/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;67pF


    12V 440mΩ@1.8V 156mW Single FETs, MOSFETs RoHS

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