onsemi-Single FETs, MOSFETs-NTR1P02LT1

Description

Drain to Source Voltage;20V/Gate Charge(Qg);3.1nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;400mW/RDS(on);220mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);1.3A/Gate Threshold Voltage (Vgs(th));1.25V/Ciss-Input Capacitance;225pF/Output Capacitance(Coss);130pF


20V 220mΩ@4.5V 1 P-Channel 400mW SOT-23-3(TO-236-3) Single FETs, MOSFETs

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);3.1nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;400mW/RDS(on);220mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);1.3A/Gate Threshold Voltage (Vgs(th));1.25V/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);3.1nC@4.5V/Number;1 P-Channel/Type;P-Channel/Pd - Power Dissipation;400mW/RDS(on);220mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);55pF/Current - Continuous Drain(Id);1.3A/Gate Threshold Voltage (Vgs(th));1.25V/Ciss-Input Capacitance;225pF/Output Capacitance(Coss);130pF


    20V 220mΩ@4.5V 1 P-Channel 400mW SOT-23-3(TO-236-3) Single FETs, MOSFETs

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