onsemi-Single FETs, MOSFETs-NTR3C21NZT3G

Description

Drain to Source Voltage;20V/Gate Charge(Qg);17.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;470mW/RDS(on);24mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.54nF


20V 24mΩ@4.5V 1 N-channel 470mW SOT-23 Single FETs, MOSFETs RoHS

Product form

Drain to Source Voltage;20V/Gate Charge(Qg);17.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;470mW/RDS(on);24mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.54nF20V 24mΩ@4.5V 1... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);17.8nC@4.5V/Number;1 N-channel/Pd - Power Dissipation;470mW/RDS(on);24mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Current - Continuous Drain(Id);3.6A/Gate Threshold Voltage (Vgs(th));1V/Ciss-Input Capacitance;1.54nF


    20V 24mΩ@4.5V 1 N-channel 470mW SOT-23 Single FETs, MOSFETs RoHS

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