onsemi-Single FETs, MOSFETs-NTS4101PT1G

Description

Drain to Source Voltage;20V/Gate Charge(Qg);9nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;329mW/RDS(on);83mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);1.37A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;840pF


P-Channel 20V 1.37A 0.329W Surface Mount SOT-323

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Drain to Source Voltage;20V/Gate Charge(Qg);9nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;329mW/RDS(on);83mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);1.37A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input... Read more

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    Description

    Drain to Source Voltage;20V/Gate Charge(Qg);9nC@4.5V/Number;1 P-Channel/Pd - Power Dissipation;329mW/RDS(on);83mΩ@4.5V/Operating Temperature -;-55℃~+150℃/Reverse Transfer Capacitance (Crss@Vds);85pF/Current - Continuous Drain(Id);1.37A/Gate Threshold Voltage (Vgs(th));450mV/Ciss-Input Capacitance;840pF


    P-Channel 20V 1.37A 0.329W Surface Mount SOT-323

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